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WNM2016 N-Channel, 20V, 3.2A, Power MOSFET
MOS場效應管WNM2016-3/TR芯瑞SReleics
The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2016 is Pb-free and Halogen-free.
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