2SK209-GR 深圳市星河微電子有限公司
發布時間： 2020/7/16 12:39:26 | 383 次閱讀
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK209
Audio Frequency Low Noise Amplifier Applications
• High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0
• High breakdown voltage: VGDS = −50 V
• Low noise: NF = 1.0dB (typ.)
at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ
• High input impedance: IGSS = −1 nA (max) at VGS = −30 V
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Gate-drain voltage VGDS −50 V
Gate current IG 10 mA
Drain power dissipation PD 150 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc)
